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| TO-220 Plastic Package TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 Boca Semiconductor Corp. TIP120, 121, 122 TIP125, 126, 127 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 4 1 2 3 B H F C E DIM A B C D E F G H J K L M N O M IN. 14.42 9.63 3.56 M A X. N L O 123 D G J M 16.51 10.67 4.83 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43 0.56 12.70 14.73 2.80 4.07 2.03 2.92 31.24 DE G 7 A O ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25C Junction temperature Collector-emitter saturation voltage IC = 3 A; IB = 12 mA D.C. current gain IC = 0.5 A; VCE = 3 V VCBO VCEO IC Ptot Tj VCEsat hFE All dim insions in m m . K 120 125 max. 60 max. 60 max. max. max. max. min. 120 125 max. 60 max. 60 max. 121 126 80 80 5.0 65 150 2.0 1.0 121 126 80 80 5.0 122 127 100 100 V V A W C V RATINGS (at TA=25C unless otherwise specified) Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) VCBO VCEO VEBO 122 127 100 100 V V V http://www.bocasemi.com page: 1 Boca Semiconductor Corp. BSC TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 Collector current IC Collector current (peak) ICM Base current IB Total power dissipation up to TC = 25C P tot Derate above 25C Total power dissipation up to TA = 25C P tot Derate above 25C Junction temperature Tj Storage temperature T stg THERMAL RESISTANCE From junction to ambient From junction to case CHARACTERISTICS Tamb = 25C unless otherwise specified Collector cutoff current IE = 0; VCB = 60 V IE = 0; VCB = 80 V IE = 0; VCB = 100 V IB = 0; VCE = 30V IB = 0; VCE = 40V IB = 0; VCE = 50V Emitter cut-off current IC = 0; VEB = 5 V Breakdown voltages IC = 100 mA; IB = 0 IC = 1 mA; IE = 0 IE = 1 mA; IC = 0 Saturation voltages IC = 3.0 A; IB = 12 mA IC = 5.0 A; IB = 20 mA Base-emitter on voltage IC = 3A; VCE = 3V D.C. current gain IC = 0.5A; VCE = 3V IC = 3A; VCE = 3V Small signal current gain IC = 3A; VCE = 4V; f = 1 MHz Output capacitance at f = 0.1 MHz PNP IE = 0; VCB = 10V NPN ICBO ICBO ICBO ICEO ICEO ICEO IEBO VCEO(sus)* VCBO VEBO VCEsat* VCEsat* VBE(on)* hFE* |h fe | Co Co R th j-a R th j-c max. max. max. max. max max. max max. 5.0 8 120 65 0.52 2 0.016 150 -65 to +150 62.5 1.92 120 125 121 126 - 0.2 - - 0.5 - 2.0 60 60 80 80 5.0 2.0 4.0 2.5 1.0 1.0 4.0 300 200 100 100 122 127 - - 0.2 - - 0.5 A A mA W W /C W W /C C C C W / C W / max. 0.2 max. - max. - max. 0.5 max. - max. - max. min. min. min. max. max. max. min. min. min. max. max. mA mA mA mA mA mA mA V V V V V V pF pF * Pulse test: pulse width 300 s; duty cycle 2%. http://www.bocasemi.com page: 2 |
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